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Localization of holes near charged defects in orbitally degenerate, doped Mott insulators
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Localization of holes near charged defects in orbitally ...
Bibliographic description
| title: | Localization of holes near charged defects in orbitally degenerate, doped Mott insulators |
| author: | Avella Adolfo, Oleś Andrzej  , Horsch Peter |
| Journal title: | Physica. B, Condensed Matter |
| Title of volume: | Proceedings of the International Conference on Strongly Correlated Electron Systems 2017 (SCES 2017) : 17-21 July 2017, Prague, Czech Republic |
| volume: | 536 |
| date of publication: | 2018 |
| pages: | 738-741 |
| ISSN: |
0921-4526 |
| eISSN: |
1873-2135 |
| DOI: | |
| language: | English |
| Journal language: | English |
| keywords in english: | Mott insulator, orbital degeneracy, spin-orbital order, charge defect, hole localization, inverse participation number |
| Conference: | International Conference on Strongly Correlated Electron Systems (SCES 2017); 2017-07-17; 2017-07-21; Praga; Czechy; indeksowana w Web of Science; indeksowana w Scopus; ; |
| affiliation: | Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego |
| type: | journal article |
| subtype: | conference proceedings |
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