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Temperature-modulated doping at polymer semiconductor interfaces

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Temperature-modulated doping at polymer semiconductor interfaces

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dc.contributor.author Holmes, Natalie P. pl
dc.contributor.author Elkington, Daniel C. pl
dc.contributor.author Bergin, Matthew pl
dc.contributor.author Griffith, Matthew J. pl
dc.contributor.author Sharma, Anirudh pl
dc.contributor.author Fahy, Adam pl
dc.contributor.author Andersson, Mats R. pl
dc.contributor.author Belcher, Warwick pl
dc.contributor.author Rysz, Jakub [SAP11116295] pl
dc.contributor.author Dastoor, Paul C. pl
dc.date.accessioned 2021-09-27T18:03:47Z
dc.date.available 2021-09-27T18:03:47Z
dc.date.issued 2021 pl
dc.identifier.uri https://ruj.uj.edu.pl/xmlui/handle/item/279179
dc.language eng pl
dc.rights Dodaję tylko opis bibliograficzny *
dc.rights.uri *
dc.title Temperature-modulated doping at polymer semiconductor interfaces pl
dc.type JournalArticle pl
dc.description.physical 1384-1393 pl
dc.abstract.en Understanding doping in polymer semiconductors has important implications for the development of organic electronic devices. This study reports a detailed investigation of the doping of the poly(3-hexylthiophene) (P3HT)/Nafion bilayer interfaces commonly used in organic biosensors. A combination of UV–visible spectroscopy, dynamic secondary ion mass spectrometry (d-SIMS), dynamic mechanical thermal analysis, and electrical device characterization reveals that the doping of P3HT increases with annealing temperature, and this increase is associated with thermally activated interdiffusion of the P3HT and Nafion. First-principles modeling of d-SIMS depth profiling data demonstrates that the diffusivity coefficient is a strong function of the molar concentration, resulting in a discrete intermixed region at the P3HT/Nafion interface that grows with increasing annealing temperature. Correlating the electrical conductance measurements with the diffusion model provides a detailed model for the temperature-modulated doping that occurs in P3HT/Nafion bilayers. Point-of-care testing has created a market for low-cost sensor technology, with printed organic electronic sensors well positioned to meet this demand, and this article constitutes a detailed study of the doping mechanism underlying such future platforms for the development of sensing technologies based on organic semiconductors. pl
dc.subject.en biosensor pl
dc.subject.en printed electronics pl
dc.subject.en organic electronics pl
dc.subject.en doping pl
dc.subject.en semiconductor interface pl
dc.description.volume 3 pl
dc.description.number 3 pl
dc.identifier.doi 10.1021/acsaelm.1c00008 pl
dc.identifier.eissn 2637-6113 pl
dc.title.journal ACS Applied Electronic Materials pl
dc.language.container eng pl
dc.affiliation Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego pl
dc.subtype Article pl
dc.rights.original bez licencji pl
dc.identifier.project ROD UJ / O pl
dc.pbn.affiliation Dziedzina nauk ścisłych i przyrodniczych : nauki fizyczne pl
.pointsMNiSW [2021 A]: 20


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