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Construction of atomic-scale logic gates on a surface of hydrogen passivated germanium

2013
journal article
article
10.1016/j.mee.2013.03.061
Journal
Microelectronic Engineering
25
Author
Kolmer Marek

Godlewski Szymon

Lis Jakub

Such Bartosz

Kantorovich Lev

Szymoński Marek
Title of volume
Insulating Films on Semiconductors 2013
Volume
109
Pages
262-265
ISSN
0167-9317
eISSN
1873-5568
Keywords in English

hydrogen passivated germanium

STM

dangling bond nanostructures

atomic-scale logic gates

Language
English
Container language
English
Affiliation
Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego
dc.affiliationWydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiegopl
dc.contributor.authorKolmer, Marek - 107205 pl
dc.contributor.authorGodlewski, Szymon - 140233 pl
dc.contributor.authorLis, Jakub - 161143 pl
dc.contributor.authorSuch, Bartosz - 101122 pl
dc.contributor.authorKantorovich, Levpl
dc.contributor.authorSzymoński, Marek - 132296 pl
dc.date.accessioned2015-07-02T08:19:36Z
dc.date.available2015-07-02T08:19:36Z
dc.date.issued2013pl
dc.description.admin[AB] Lis, Jakub [SAP14002066] 50000139
dc.description.physical262-265pl
dc.description.volume109pl
dc.identifier.doi10.1016/j.mee.2013.03.061pl
dc.identifier.eissn1873-5568pl
dc.identifier.issn0167-9317pl
dc.identifier.urihttp://ruj.uj.edu.pl/xmlui/handle/item/11139
dc.languageengpl
dc.language.containerengpl
dc.rightsDodaję tylko opis bibliograficzny*
dc.rights.licencebez licencji
dc.rights.uri*
dc.subject.enhydrogen passivated germaniumpl
dc.subject.enSTMpl
dc.subject.endangling bond nanostructurespl
dc.subject.enatomic-scale logic gatespl
dc.subtypeArticlepl
dc.titleConstruction of atomic-scale logic gates on a surface of hydrogen passivated germaniumpl
dc.title.journalMicroelectronic Engineeringpl
dc.title.volumeInsulating Films on Semiconductors 2013pl
dc.typeJournalArticlepl
dspace.entity.typePublication
dc.affiliationpl
Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego
dc.contributor.authorpl
Kolmer, Marek - 107205
dc.contributor.authorpl
Godlewski, Szymon - 140233
dc.contributor.authorpl
Lis, Jakub - 161143
dc.contributor.authorpl
Such, Bartosz - 101122
dc.contributor.authorpl
Kantorovich, Lev
dc.contributor.authorpl
Szymoński, Marek - 132296
dc.date.accessioned
2015-07-02T08:19:36Z
dc.date.available
2015-07-02T08:19:36Z
dc.date.issuedpl
2013
dc.description.admin
[AB] Lis, Jakub [SAP14002066] 50000139
dc.description.physicalpl
262-265
dc.description.volumepl
109
dc.identifier.doipl
10.1016/j.mee.2013.03.061
dc.identifier.eissnpl
1873-5568
dc.identifier.issnpl
0167-9317
dc.identifier.uri
http://ruj.uj.edu.pl/xmlui/handle/item/11139
dc.languagepl
eng
dc.language.containerpl
eng
dc.rights*
Dodaję tylko opis bibliograficzny
dc.rights.licence
bez licencji
dc.rights.uri*
dc.subject.enpl
hydrogen passivated germanium
dc.subject.enpl
STM
dc.subject.enpl
dangling bond nanostructures
dc.subject.enpl
atomic-scale logic gates
dc.subtypepl
Article
dc.titlepl
Construction of atomic-scale logic gates on a surface of hydrogen passivated germanium
dc.title.journalpl
Microelectronic Engineering
dc.title.volumepl
Insulating Films on Semiconductors 2013
dc.typepl
JournalArticle
dspace.entity.type
Publication

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