Ultrathin high‐efficiency Zener diode fabricated using organized ZnS nanoparticles in surface‐grafted poly(methacrylic acid) matrix

2025
journal article
article
dc.abstract.enHere, the fabrication method of ultrathin Zener diodes is presented utilizing a novel hybrid system of zinc sulfide (ZnS) nanoparticles embedded within a poly(methacrylic acid) (PMAA) matrix, surface-grafted via ARGET-ATRP polymerization. The controlled polymerization method facilitates precise control over layer thickness, while the in situ synthesis of ZnS nanoparticles ensures uniform coverage throughout the polymer matrix. The obtained hybrid systems with nanometric thickness (<40 nm) are characterized by diode conductivity with a clear breakdown characteristic of the Zener system. The obtained ultra-thin layers on p-doped silicon, in addition to their electrical characteristics, are studied using an atomic force microscope (AFM) and secondary ion mass spectrometry (SIMS) to examine the structure and composition of a hybrid polymer-nanoparticle system.
dc.affiliationWydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego
dc.contributor.authorWieczorek, Wojciech
dc.contributor.authorMazur, Tomasz
dc.contributor.authorGórka-Kumik, Weronika - 204854
dc.contributor.authorDąbczyński, Paweł - 190151
dc.contributor.authorPodborska, Agnieszka
dc.contributor.authorBernasik, Andrzej
dc.contributor.authorSzuwarzyński, Michał
dc.date.accessioned2025-01-22T11:58:36Z
dc.date.available2025-01-22T11:58:36Z
dc.date.createdat2025-01-20T14:20:14Zen
dc.date.issued2025
dc.date.openaccess0
dc.description.accesstimew momencie opublikowania
dc.description.additionalOnline First 2025-01-17
dc.description.versionostateczna wersja wydawcy
dc.identifier.articleid2400772
dc.identifier.doi10.1002/aelm.202400772
dc.identifier.issn2199-160X
dc.identifier.urihttps://ruj.uj.edu.pl/handle/item/546054
dc.languageeng
dc.language.containereng
dc.rightsUdzielam licencji. Uznanie autorstwa 4.0 Międzynarodowa
dc.rights.licenceCC-BY
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/legalcode.pl
dc.share.typeotwarte czasopismo
dc.subtypeArticle
dc.titleUltrathin high‐efficiency Zener diode fabricated using organized ZnS nanoparticles in surface‐grafted poly(methacrylic acid) matrix
dc.title.journalAdvanced Electronic Materials
dc.typeJournalArticle
dspace.entity.typePublicationen
dc.abstract.en
Here, the fabrication method of ultrathin Zener diodes is presented utilizing a novel hybrid system of zinc sulfide (ZnS) nanoparticles embedded within a poly(methacrylic acid) (PMAA) matrix, surface-grafted via ARGET-ATRP polymerization. The controlled polymerization method facilitates precise control over layer thickness, while the in situ synthesis of ZnS nanoparticles ensures uniform coverage throughout the polymer matrix. The obtained hybrid systems with nanometric thickness (<40 nm) are characterized by diode conductivity with a clear breakdown characteristic of the Zener system. The obtained ultra-thin layers on p-doped silicon, in addition to their electrical characteristics, are studied using an atomic force microscope (AFM) and secondary ion mass spectrometry (SIMS) to examine the structure and composition of a hybrid polymer-nanoparticle system.
dc.affiliation
Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego
dc.contributor.author
Wieczorek, Wojciech
dc.contributor.author
Mazur, Tomasz
dc.contributor.author
Górka-Kumik, Weronika - 204854
dc.contributor.author
Dąbczyński, Paweł - 190151
dc.contributor.author
Podborska, Agnieszka
dc.contributor.author
Bernasik, Andrzej
dc.contributor.author
Szuwarzyński, Michał
dc.date.accessioned
2025-01-22T11:58:36Z
dc.date.available
2025-01-22T11:58:36Z
dc.date.createdaten
2025-01-20T14:20:14Z
dc.date.issued
2025
dc.date.openaccess
0
dc.description.accesstime
w momencie opublikowania
dc.description.additional
Online First 2025-01-17
dc.description.version
ostateczna wersja wydawcy
dc.identifier.articleid
2400772
dc.identifier.doi
10.1002/aelm.202400772
dc.identifier.issn
2199-160X
dc.identifier.uri
https://ruj.uj.edu.pl/handle/item/546054
dc.language
eng
dc.language.container
eng
dc.rights
Udzielam licencji. Uznanie autorstwa 4.0 Międzynarodowa
dc.rights.licence
CC-BY
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/legalcode.pl
dc.share.type
otwarte czasopismo
dc.subtype
Article
dc.title
Ultrathin high‐efficiency Zener diode fabricated using organized ZnS nanoparticles in surface‐grafted poly(methacrylic acid) matrix
dc.title.journal
Advanced Electronic Materials
dc.type
JournalArticle
dspace.entity.typeen
Publication
Affiliations

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