Simple view
Full metadata view
Authors
Statistics
Transient formation of single layer diamond during friction force microscopy of SiC‐supported epitaxial graphene
Online First 2025-09-12
Carbon allotropes are crucial to advanced interfaces to control friction and wear because of their unique range of mechanical properties: from diamond's hardness to graphite's lubricity. Friction force microscopy (FFM) is reported for diamond tips sliding on SiC(0001)-supported epitaxial graphene. A sharp friction increase is observed at a threshold normal force, linked to an intermittent graphene rehybridization. Comparing the FFM response of a diamond tip to that of a previously studied silicon tip with a comparable radius reveals a similar abrupt friction increase, though at roughly half the threshold force. Atomistic simulations of SiC(0001)-supported graphene sliding against hydroxylated amorphous carbon (a-C) and silicon oxide show low shear stress at low pressures for both systems. The shear stress increases at higher pressures due to bond formation between graphene and the counterbody. For a-C, the transition threshold shifts to higher pressures, consistent with FFM results. In simulations with high normal pressures, epitaxial graphene undergoes a structural transformation into single-layer diamond, contributing to the abrupt increase in friction. The graphene structure recovers after lifting the a-C counterbody, demonstrating structural robustness under tribological stress. These findings provide insights into the stability of low-friction interfaces between epitaxial graphene and key materials for current micro-electro-mechanical systems (MEMS)
dc.abstract.en | Carbon allotropes are crucial to advanced interfaces to control friction and wear because of their unique range of mechanical properties: from diamond's hardness to graphite's lubricity. Friction force microscopy (FFM) is reported for diamond tips sliding on SiC(0001)-supported epitaxial graphene. A sharp friction increase is observed at a threshold normal force, linked to an intermittent graphene rehybridization. Comparing the FFM response of a diamond tip to that of a previously studied silicon tip with a comparable radius reveals a similar abrupt friction increase, though at roughly half the threshold force. Atomistic simulations of SiC(0001)-supported graphene sliding against hydroxylated amorphous carbon (a-C) and silicon oxide show low shear stress at low pressures for both systems. The shear stress increases at higher pressures due to bond formation between graphene and the counterbody. For a-C, the transition threshold shifts to higher pressures, consistent with FFM results. In simulations with high normal pressures, epitaxial graphene undergoes a structural transformation into single-layer diamond, contributing to the abrupt increase in friction. The graphene structure recovers after lifting the a-C counterbody, demonstrating structural robustness under tribological stress. These findings provide insights into the stability of low-friction interfaces between epitaxial graphene and key materials for current micro-electro-mechanical systems (MEMS) | |
dc.affiliation | Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego | |
dc.contributor.author | Zarshenas, Mohammad | |
dc.contributor.author | Kuwahara, Takuya | |
dc.contributor.author | Szczefanowicz, Bartosz - 511566 | |
dc.contributor.author | Klemenz, Andreas | |
dc.contributor.author | Mayrhofer, Leonhard | |
dc.contributor.author | Pastewka, Lars | |
dc.contributor.author | Moras, Gianpietro | |
dc.contributor.author | Bennewitz, Roland | |
dc.contributor.author | Moseler, Michael | |
dc.date.accessioned | 2025-10-21T14:04:25Z | |
dc.date.available | 2025-10-21T14:04:25Z | |
dc.date.createdat | 2025-10-13T09:22:26Z | en |
dc.date.issued | 2025 | |
dc.date.openaccess | 0 | |
dc.description.accesstime | w momencie opublikowania | |
dc.description.additional | Online First 2025-09-12 | |
dc.description.version | ostateczna wersja wydawcy | |
dc.identifier.articleid | e00511 | |
dc.identifier.doi | 10.1002/admi.202500511 | |
dc.identifier.eissn | 2196-7350 | |
dc.identifier.uri | https://ruj.uj.edu.pl/handle/item/563366 | |
dc.language | eng | |
dc.language.container | eng | |
dc.rights | Dodaję tylko opis bibliograficzny | |
dc.rights.licence | CC-BY | |
dc.share.type | otwarte czasopismo | |
dc.subtype | Article | |
dc.title | Transient formation of single layer diamond during friction force microscopy of SiC‐supported epitaxial graphene | |
dc.title.journal | Advanced Materials Interfaces | |
dc.type | JournalArticle | |
dspace.entity.type | Publication | en |