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SiC (0001) and (000
silicon carbide
surface diffusion
migration activation barriers
diffusion coefficients
multiscale simulations
Diffusion parameters of Si and C on (0001) and (000
| cris.lastimport.scopus | 2024-04-07T17:33:17Z | |
| cris.lastimport.wos | 2024-04-09T23:46:12Z | |
| dc.abstract.en | Diffusion parameters of Si and C on (0001) and (000$\bar{1}$) SiC surfaces were estimated using an effective method based on Kinetic Monte Carlo (KMC) simulations involving activation barriers for atomic migration calculated using Nudged Elastic Band – Climbing Image algorithm implemented with Analytic Bond-Order potentials derived for the SiC. Simulated was a model crystal/vacancy "surface diffusion couple" and the KMC results were analysed within the Matano formalism. The MC-time was rescaled into real-time units by comparing the results of KMC simulations of Si (001) surface diffusion in Si crystal with the experimental data. | pl |
| dc.affiliation | Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego | pl |
| dc.contributor.author | Kozłowski, Mirosław | pl |
| dc.contributor.author | Sowa, Piotr - 116431 | pl |
| dc.contributor.author | Biborski, Andrzej | pl |
| dc.contributor.author | Abdank-Kozubski, Rafał - 102263 | pl |
| dc.date.accessioned | 2015-05-20T12:37:59Z | |
| dc.date.available | 2015-05-20T12:37:59Z | |
| dc.date.issued | 2014 | pl |
| dc.description.admin | [AU] Biborski, Andrzej [USOS58074] | |
| dc.description.physical | 413-416 | pl |
| dc.description.volume | 132 | pl |
| dc.identifier.doi | 10.1016/j.matlet.2014.06.128 | pl |
| dc.identifier.eissn | 1873-4979 | pl |
| dc.identifier.issn | 0167-577X | pl |
| dc.identifier.uri | http://ruj.uj.edu.pl/xmlui/handle/item/7578 | |
| dc.language | eng | pl |
| dc.language.container | eng | pl |
| dc.rights | Dodaję tylko opis bibliograficzny | * |
| dc.rights.licence | bez licencji | |
| dc.rights.uri | * | |
| dc.subject.en | silicon carbide | pl |
| dc.subject.en | surface diffusion | pl |
| dc.subject.en | migration activation barriers | pl |
| dc.subject.en | diffusion coefficients | pl |
| dc.subject.en | multiscale simulations | pl |
| dc.subtype | Article | pl |
| dc.title | SiC (0001) and (000$\bar{1}$) surfaces diffusion parameters estimated by means of atomistic Kinetic Monte Carlo simulations | pl |
| dc.title.journal | Materials Letters | pl |
| dc.type | JournalArticle | pl |
| dspace.entity.type | Publication |