Low-temperature technique of thin silicon ion implanted epitaxial detectors

doi:10.1140/epja/i2015-15015-2

Low-temperature technique of thin silicon ion implanted epitaxial detectors

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Low-temperature technique of thin silicon ion implanted epitaxial detectors

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dc.contributor.author	Kordyasz, A. J.	pl
dc.contributor.author	Le Neindre, N.	pl
dc.contributor.author	Parlog, M.	pl
dc.contributor.author	Casini, G.	pl
dc.contributor.author	Bougault, R.	pl
dc.contributor.author	Poggi, G.	pl
dc.contributor.author	Bednarek, A.	pl
dc.contributor.author	Kowalczyk, M.	pl
dc.contributor.author	Lopez, O.	pl
dc.contributor.author	Merrer, Y.	pl
dc.contributor.author	Vient, E.	pl
dc.contributor.author	Frankland, J. D.	pl
dc.contributor.author	Bonnet, E.	pl
dc.contributor.author	Chbihi, A.	pl
dc.contributor.author	Gruyer, D.	pl
dc.contributor.author	Borderie, B.	pl
dc.contributor.author	Ademard, G.	pl
dc.contributor.author	Edelbruck, P.	pl
dc.contributor.author	Rivet, M. F.	pl
dc.contributor.author	Salomon, F.	pl
dc.contributor.author	Bini, M.	pl
dc.contributor.author	Valdré, S.	pl
dc.contributor.author	Scarlini, E.	pl
dc.contributor.author	Pasquali, G.	pl
dc.contributor.author	Pastore, G.	pl
dc.contributor.author	Piantelli, S.	pl
dc.contributor.author	Stefanini, A.	pl
dc.contributor.author	Olmi, A.	pl
dc.contributor.author	Barlini, S.	pl
dc.contributor.author	Boiano, A.	pl
dc.contributor.author	Rosato, E.	pl
dc.contributor.author	Meoli, A.	pl
dc.contributor.author	Ordine, A.	pl
dc.contributor.author	Spadaccini, G.	pl
dc.contributor.author	Tortone, G.	pl
dc.contributor.author	Vigilante, M.	pl
dc.contributor.author	Vanzanella, E.	pl
dc.contributor.author	Bruno, M.	pl
dc.contributor.author	Serra, S.	pl
dc.contributor.author	Morelli, L.	pl
dc.contributor.author	Guerzoni, M.	pl
dc.contributor.author	Alba, R.	pl
dc.contributor.author	Santonocito, D.	pl
dc.contributor.author	Maiolino, C.	pl
dc.contributor.author	Cinausero, M.	pl
dc.contributor.author	Gramegna, F.	pl
dc.contributor.author	Marchi, T.	pl
dc.contributor.author	Kozik, Tomasz [SAP11008791]	pl
dc.contributor.author	Kulig, P.	pl
dc.contributor.author	Twaróg, Tomasz [USOS34510]	pl
dc.contributor.author	Sosin, Zbigniew [SAP11010294]	pl
dc.contributor.author	Ga̧sior, K.	pl
dc.contributor.author	Grzeszczuk, A.	pl
dc.contributor.author	Zipper, W.	pl
dc.contributor.author	Sarnecki, J.	pl
dc.contributor.author	Lipiński, D.	pl
dc.contributor.author	Wodzińska, H.	pl
dc.contributor.author	Brzozowski, A.	pl
dc.contributor.author	Teodorczyk, M.	pl
dc.contributor.author	Gajewski, M.	pl
dc.contributor.author	Zagojski, A.	pl
dc.contributor.author	Krzyżak, K.	pl
dc.contributor.author	Tarasiuk, K. J.	pl
dc.contributor.author	Khabanowa, Z.	pl
dc.contributor.author	Kordyasz, Ł.	pl
dc.date.accessioned	2015-03-19T08:16:39Z
dc.date.available	2015-03-19T08:16:39Z
dc.date.issued	2015	pl
dc.identifier.issn	1434-6001	pl
dc.identifier.uri	http://ruj.uj.edu.pl/xmlui/handle/item/3956
dc.language	eng	pl
dc.rights	Udzielam licencji. Uznanie autorstwa 4.0 Międzynarodowa	*
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/pl/legalcode	*
dc.title	Low-temperature technique of thin silicon ion implanted epitaxial detectors	pl
dc.type	JournalArticle	pl
dc.abstract.en	A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am (〈E α 〉 = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr (E = 35 A MeV) + 112Sn. The ΔE − E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.	pl
dc.description.volume	51	pl
dc.description.number	2	pl
dc.description.publication	0,5	pl
dc.identifier.doi	10.1140/epja/i2015-15015-2	pl
dc.identifier.eissn	1434-601X	pl
dc.title.journal	The European Physical Journal. A, Hadrons and Nuclei	pl
dc.language.container	eng	pl
dc.affiliation	Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego	pl
dc.subtype	Article	pl
dc.identifier.articleid	15	pl
dc.rights.original	CC-BY; inne; ostateczna wersja wydawcy; w momencie opublikowania; 0;	pl
dc.identifier.project	ROD UJ / P	pl
.pointsMNiSW	[2015 A]: 30