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Low-temperature technique of thin silicon ion implanted epitaxial detectors

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Low-temperature technique of thin silicon ion implanted epitaxial detectors

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dc.contributor.author Kordyasz, A. J. pl
dc.contributor.author Le Neindre, N. pl
dc.contributor.author Parlog, M. pl
dc.contributor.author Casini, G. pl
dc.contributor.author Bougault, R. pl
dc.contributor.author Poggi, G. pl
dc.contributor.author Bednarek, A. pl
dc.contributor.author Kowalczyk, M. pl
dc.contributor.author Lopez, O. pl
dc.contributor.author Merrer, Y. pl
dc.contributor.author Vient, E. pl
dc.contributor.author Frankland, J. D. pl
dc.contributor.author Bonnet, E. pl
dc.contributor.author Chbihi, A. pl
dc.contributor.author Gruyer, D. pl
dc.contributor.author Borderie, B. pl
dc.contributor.author Ademard, G. pl
dc.contributor.author Edelbruck, P. pl
dc.contributor.author Rivet, M. F. pl
dc.contributor.author Salomon, F. pl
dc.contributor.author Bini, M. pl
dc.contributor.author Valdré, S. pl
dc.contributor.author Scarlini, E. pl
dc.contributor.author Pasquali, G. pl
dc.contributor.author Pastore, G. pl
dc.contributor.author Piantelli, S. pl
dc.contributor.author Stefanini, A. pl
dc.contributor.author Olmi, A. pl
dc.contributor.author Barlini, S. pl
dc.contributor.author Boiano, A. pl
dc.contributor.author Rosato, E. pl
dc.contributor.author Meoli, A. pl
dc.contributor.author Ordine, A. pl
dc.contributor.author Spadaccini, G. pl
dc.contributor.author Tortone, G. pl
dc.contributor.author Vigilante, M. pl
dc.contributor.author Vanzanella, E. pl
dc.contributor.author Bruno, M. pl
dc.contributor.author Serra, S. pl
dc.contributor.author Morelli, L. pl
dc.contributor.author Guerzoni, M. pl
dc.contributor.author Alba, R. pl
dc.contributor.author Santonocito, D. pl
dc.contributor.author Maiolino, C. pl
dc.contributor.author Cinausero, M. pl
dc.contributor.author Gramegna, F. pl
dc.contributor.author Marchi, T. pl
dc.contributor.author Kozik, Tomasz [SAP11008791] pl
dc.contributor.author Kulig, P. pl
dc.contributor.author Twaróg, Tomasz [USOS34510] pl
dc.contributor.author Sosin, Zbigniew [SAP11010294] pl
dc.contributor.author Ga̧sior, K. pl
dc.contributor.author Grzeszczuk, A. pl
dc.contributor.author Zipper, W. pl
dc.contributor.author Sarnecki, J. pl
dc.contributor.author Lipiński, D. pl
dc.contributor.author Wodzińska, H. pl
dc.contributor.author Brzozowski, A. pl
dc.contributor.author Teodorczyk, M. pl
dc.contributor.author Gajewski, M. pl
dc.contributor.author Zagojski, A. pl
dc.contributor.author Krzyżak, K. pl
dc.contributor.author Tarasiuk, K. J. pl
dc.contributor.author Khabanowa, Z. pl
dc.contributor.author Kordyasz, Ł. pl
dc.date.accessioned 2015-03-19T08:16:39Z
dc.date.available 2015-03-19T08:16:39Z
dc.date.issued 2015 pl
dc.identifier.issn 1434-6001 pl
dc.identifier.uri http://ruj.uj.edu.pl/xmlui/handle/item/3956
dc.language eng pl
dc.rights Udzielam licencji. Uznanie autorstwa 4.0 Międzynarodowa *
dc.rights.uri http://creativecommons.org/licenses/by/4.0/pl/legalcode *
dc.title Low-temperature technique of thin silicon ion implanted epitaxial detectors pl
dc.type JournalArticle pl
dc.abstract.en A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am (〈E α 〉 = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr (E = 35 A MeV) + 112Sn. The ΔE − E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge. pl
dc.description.volume 51 pl
dc.description.number 2 pl
dc.description.publication 0,5 pl
dc.identifier.doi 10.1140/epja/i2015-15015-2 pl
dc.identifier.eissn 1434-601X pl
dc.title.journal The European Physical Journal. A, Hadrons and Nuclei pl
dc.language.container eng pl
dc.affiliation Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego pl
dc.subtype Article pl
dc.identifier.articleid 15 pl
dc.rights.original CC-BY; inne; ostateczna wersja wydawcy; w momencie opublikowania; 0; pl
dc.identifier.project ROD UJ / P pl
.pointsMNiSW [2015 A]: 30


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Udzielam licencji. Uznanie autorstwa 4.0 Międzynarodowa Except where otherwise noted, this item's license is described as Udzielam licencji. Uznanie autorstwa 4.0 Międzynarodowa