Low-temperature technique of thin silicon ion implanted epitaxial detectors

doi:10.1140/epja/i2015-15015-2

Low-temperature technique of thin silicon ion implanted epitaxial detectors

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Low-temperature technique of thin silicon ion implanted epitaxial detectors

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punktacja MNiSW [2015 A]: 30

title:	Low-temperature technique of thin silicon ion implanted epitaxial detectors
author:	Kordyasz A. J., Le Neindre N., Parlog M., Casini G., Bougault R., Poggi G., Bednarek A., Kowalczyk M., Lopez O., Merrer Y., Vient E., Frankland J. D., Bonnet E., Chbihi A., Gruyer D., Borderie B., Ademard G., Edelbruck P., Rivet M. F., Salomon F., Bini M., Valdré S., Scarlini E., Pasquali G., Pastore G., Piantelli S., Stefanini A., Olmi A., Barlini S., Boiano A., Rosato E., Meoli A., Ordine A., Spadaccini G., Tortone G., Vigilante M., Vanzanella E., Bruno M., Serra S., Morelli L., Guerzoni M., Alba R., Santonocito D., Maiolino C., Cinausero M., Gramegna F., Marchi T., Kozik Tomasz , Kulig P., Twaróg Tomasz , Sosin Zbigniew , Ga̧sior K., Grzeszczuk A., Zipper W., Sarnecki J., Lipiński D., Wodzińska H., Brzozowski A., Teodorczyk M., Gajewski M., Zagojski A., Krzyżak K., Tarasiuk K. J., Khabanowa Z., Kordyasz Ł.
journal title:	The European Physical Journal. A, Hadrons and Nuclei
volume:	51
issue:	2
date of publication :	2015
article ID:	15
ISSN:	1434-6001
eISSN:	1434-601X
DOI:	10.1140/epja/i2015-15015-2
language:	English
journal language:	English
abstract in English:	A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am (〈E α 〉 = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr (E = 35 A MeV) + 112Sn. The ΔE − E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.
number of pulisher's sheets:	0,5
affiliation:	Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego
type:	journal article
subtype:	academic paper