How material properties affect depth profiles : insight from computer modeling
pl
dc.type
JournalArticle
pl
dc.description.physical
253-256
pl
dc.abstract.en
A previously developed steady-state statistical sputtering model (SS-SSM) is useful for interpretation of molecular dynamics (MD) simulations of repetitive bombardment. This method is applicable to computer modeling of depth profiling. In this paper, we demonstrate how the formalism provided by SS-SSM is used to identify the factors that determine the depth resolution of δ-layer depth profiling. The analysis is based on MD simulations of repetitive keV C60 bombardment of coinage metal samples. The results show that the primary dependence of the depth profiling quality is on the sample binding energy, with bigger binding energies giving better depth resolution. The effects of sample atom mass and surface opacity are also discussed.
pl
dc.subject.en
cluster sputtering
pl
dc.subject.en
depth profiling
pl
dc.subject.en
molecular dynamics
pl
dc.subject.en
sputtering model
pl
dc.subject.en
computer modeling
pl
dc.description.volume
46
pl
dc.description.number
S1
pl
dc.identifier.doi
10.1002/sia.5423
pl
dc.identifier.eissn
1096-9918
pl
dc.title.journal
Surface and Interface Analysis
pl
dc.language.container
eng
pl
dc.affiliation
Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego