Reversible graphitization of SiC : a route towards high-quality graphene on a minimally step bunched substrate

2020
journal article
article
15
cris.lastimport.wos2024-04-09T21:42:56Z
dc.abstract.enWe show that the thermal decomposition of SiC (0001) surface is reversible, if carried out in near-equilibrium conditions, with an external Si atomic beam applied to the substrate. Taking advantage of this observation we design a novel process, allowing for the growth of uniform, few-layers, ABC-stacked graphene. This process is composed of two phases; the first is a graphene film growth and the second is its reduction to the desired thickness. We find that, when using this scheme instead of the conventional ones the heavy step bunching on the substrate is avoided, and the step heights remain below 2.75 nm. Since the step bunching is one of the most important factors prohibiting the use of epitaxial graphene on SiC in certain application areas, such as analog electronics or sensing, our method has the potential to be applied in future wafer-scale graphene technologies and processes. Moreover, the results obtained in this work exemplify general near-equilibrium phenomena and therefore they may be also relevant for growth methods of other 2D materials.pl
dc.affiliationWydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiegopl
dc.affiliationPion Prorektora ds. badań naukowych : Narodowe Centrum Promieniowania Synchrotronowego SOLARISpl
dc.contributor.authorCiochoń, Piotr - 179233 pl
dc.contributor.authorMarzec, Mateuszpl
dc.contributor.authorOlszowska, Natalia - 106915 pl
dc.contributor.authorKołodziej, Jacek - 129019 pl
dc.date.accessioned2020-11-27T10:05:38Z
dc.date.available2020-11-27T10:05:38Z
dc.date.issued2020pl
dc.date.openaccess0
dc.description.accesstimew momencie opublikowania
dc.description.versionostateczna wersja wydawcy
dc.description.volume528pl
dc.identifier.articleid146917pl
dc.identifier.doi10.1016/j.apsusc.2020.146917pl
dc.identifier.eissn1873-5584pl
dc.identifier.issn0169-4332pl
dc.identifier.projectROD UJ / OPpl
dc.identifier.urihttps://ruj.uj.edu.pl/xmlui/handle/item/255077
dc.languageengpl
dc.language.containerengpl
dc.rightsUdzielam licencji. Uznanie autorstwa - Użycie niekomercyjne - Bez utworów zależnych 4.0 Międzynarodowa*
dc.rights.licenceCC-BY-NC-ND
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.pl*
dc.share.typeinne
dc.subject.engraphenepl
dc.subject.ensilicon carbidepl
dc.subject.ensynthesispl
dc.subject.ensurfacepl
dc.subtypeArticlepl
dc.titleReversible graphitization of SiC : a route towards high-quality graphene on a minimally step bunched substratepl
dc.title.journalApplied Surface Sciencepl
dc.typeJournalArticlepl
dspace.entity.typePublication
cris.lastimport.wos
2024-04-09T21:42:56Z
dc.abstract.enpl
We show that the thermal decomposition of SiC (0001) surface is reversible, if carried out in near-equilibrium conditions, with an external Si atomic beam applied to the substrate. Taking advantage of this observation we design a novel process, allowing for the growth of uniform, few-layers, ABC-stacked graphene. This process is composed of two phases; the first is a graphene film growth and the second is its reduction to the desired thickness. We find that, when using this scheme instead of the conventional ones the heavy step bunching on the substrate is avoided, and the step heights remain below 2.75 nm. Since the step bunching is one of the most important factors prohibiting the use of epitaxial graphene on SiC in certain application areas, such as analog electronics or sensing, our method has the potential to be applied in future wafer-scale graphene technologies and processes. Moreover, the results obtained in this work exemplify general near-equilibrium phenomena and therefore they may be also relevant for growth methods of other 2D materials.
dc.affiliationpl
Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego
dc.affiliationpl
Pion Prorektora ds. badań naukowych : Narodowe Centrum Promieniowania Synchrotronowego SOLARIS
dc.contributor.authorpl
Ciochoń, Piotr - 179233
dc.contributor.authorpl
Marzec, Mateusz
dc.contributor.authorpl
Olszowska, Natalia - 106915
dc.contributor.authorpl
Kołodziej, Jacek - 129019
dc.date.accessioned
2020-11-27T10:05:38Z
dc.date.available
2020-11-27T10:05:38Z
dc.date.issuedpl
2020
dc.date.openaccess
0
dc.description.accesstime
w momencie opublikowania
dc.description.version
ostateczna wersja wydawcy
dc.description.volumepl
528
dc.identifier.articleidpl
146917
dc.identifier.doipl
10.1016/j.apsusc.2020.146917
dc.identifier.eissnpl
1873-5584
dc.identifier.issnpl
0169-4332
dc.identifier.projectpl
ROD UJ / OP
dc.identifier.uri
https://ruj.uj.edu.pl/xmlui/handle/item/255077
dc.languagepl
eng
dc.language.containerpl
eng
dc.rights*
Udzielam licencji. Uznanie autorstwa - Użycie niekomercyjne - Bez utworów zależnych 4.0 Międzynarodowa
dc.rights.licence
CC-BY-NC-ND
dc.rights.uri*
http://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.pl
dc.share.type
inne
dc.subject.enpl
graphene
dc.subject.enpl
silicon carbide
dc.subject.enpl
synthesis
dc.subject.enpl
surface
dc.subtypepl
Article
dc.titlepl
Reversible graphitization of SiC : a route towards high-quality graphene on a minimally step bunched substrate
dc.title.journalpl
Applied Surface Science
dc.typepl
JournalArticle
dspace.entity.type
Publication

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