The butterfly : a well-defined constant-current topography pattern on Si(001):H and Ge(001):H resulting from current-induced defect fluctuations

2016
journal article
article
12
dc.abstract.enDangling bond (DB) arrays on Si(001):H and Ge(001):H surfaces can be patterned with atomic precision and they exhibit complex and rich physics making them interesting from both technological and fundamental perspectives. But their complex behavior often makes scanning tunneling microscopy (STM) images difficult to interpret and simulate. Recently it was shown that low-temperature imaging of unoccupied states of an unpassivated dimer on Ge(001):H results in a symmetric butterfly-like STM pattern, despite the fact that the equilibrium dimer configuration is expected to be a bistable, buckled geometry. Here, based on a thorough characterization of the low-bias switching events on Ge(001):H, we propose a new imaging model featuring a dynamical two-state rate equation. On both Si(001):H and Ge(001):H, this model allows us to reproduce the features of the observed symmetric empty-state images which strongly corroborates the idea that the patterns arise due to fast switching events and provides an insight into the relationship between the tunneling current and switching rates. We envision that our new imaging model can be applied to simulate other bistable systems where fluctuations arise from transiently charged electronic states.pl
dc.affiliationWydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiegopl
dc.contributor.authorEngelund, Madspl
dc.contributor.authorGodlewski, Szymon - 140233 pl
dc.contributor.authorKolmer, Marek - 107205 pl
dc.contributor.authorZuzak, Rafał - 200435 pl
dc.contributor.authorSuch, Bartosz - 101122 pl
dc.contributor.authorFrederiksen, Thomaspl
dc.contributor.authorSzymoński, Marek - 132296 pl
dc.contributor.authorSánchez-Portal, Danielpl
dc.date.accessioned2016-08-10T09:36:37Z
dc.date.available2016-08-10T09:36:37Z
dc.date.issued2016pl
dc.date.openaccess0
dc.description.accesstimew momencie opublikowania
dc.description.number28pl
dc.description.physical19309-19317pl
dc.description.versionostateczna wersja wydawcy
dc.description.volume18pl
dc.identifier.doi10.1039/C6CP04031Dpl
dc.identifier.eissn1463-9084pl
dc.identifier.issn1463-9076pl
dc.identifier.urihttp://ruj.uj.edu.pl/xmlui/handle/item/29486
dc.languageengpl
dc.language.containerengpl
dc.rightsDodaję tylko opis bibliograficzny*
dc.rights.licenceCC-BY-NC
dc.rights.uri*
dc.share.typeinne
dc.subtypeArticlepl
dc.titleThe butterfly : a well-defined constant-current topography pattern on Si(001):H and Ge(001):H resulting from current-induced defect fluctuationspl
dc.title.journalPhysical Chemistry Chemical Physicspl
dc.typeJournalArticlepl
dspace.entity.typePublication
dc.abstract.enpl
Dangling bond (DB) arrays on Si(001):H and Ge(001):H surfaces can be patterned with atomic precision and they exhibit complex and rich physics making them interesting from both technological and fundamental perspectives. But their complex behavior often makes scanning tunneling microscopy (STM) images difficult to interpret and simulate. Recently it was shown that low-temperature imaging of unoccupied states of an unpassivated dimer on Ge(001):H results in a symmetric butterfly-like STM pattern, despite the fact that the equilibrium dimer configuration is expected to be a bistable, buckled geometry. Here, based on a thorough characterization of the low-bias switching events on Ge(001):H, we propose a new imaging model featuring a dynamical two-state rate equation. On both Si(001):H and Ge(001):H, this model allows us to reproduce the features of the observed symmetric empty-state images which strongly corroborates the idea that the patterns arise due to fast switching events and provides an insight into the relationship between the tunneling current and switching rates. We envision that our new imaging model can be applied to simulate other bistable systems where fluctuations arise from transiently charged electronic states.
dc.affiliationpl
Wydział Fizyki, Astronomii i Informatyki Stosowanej : Instytut Fizyki im. Mariana Smoluchowskiego
dc.contributor.authorpl
Engelund, Mads
dc.contributor.authorpl
Godlewski, Szymon - 140233
dc.contributor.authorpl
Kolmer, Marek - 107205
dc.contributor.authorpl
Zuzak, Rafał - 200435
dc.contributor.authorpl
Such, Bartosz - 101122
dc.contributor.authorpl
Frederiksen, Thomas
dc.contributor.authorpl
Szymoński, Marek - 132296
dc.contributor.authorpl
Sánchez-Portal, Daniel
dc.date.accessioned
2016-08-10T09:36:37Z
dc.date.available
2016-08-10T09:36:37Z
dc.date.issuedpl
2016
dc.date.openaccess
0
dc.description.accesstime
w momencie opublikowania
dc.description.numberpl
28
dc.description.physicalpl
19309-19317
dc.description.version
ostateczna wersja wydawcy
dc.description.volumepl
18
dc.identifier.doipl
10.1039/C6CP04031D
dc.identifier.eissnpl
1463-9084
dc.identifier.issnpl
1463-9076
dc.identifier.uri
http://ruj.uj.edu.pl/xmlui/handle/item/29486
dc.languagepl
eng
dc.language.containerpl
eng
dc.rights*
Dodaję tylko opis bibliograficzny
dc.rights.licence
CC-BY-NC
dc.rights.uri*
dc.share.type
inne
dc.subtypepl
Article
dc.titlepl
The butterfly : a well-defined constant-current topography pattern on Si(001):H and Ge(001):H resulting from current-induced defect fluctuations
dc.title.journalpl
Physical Chemistry Chemical Physics
dc.typepl
JournalArticle
dspace.entity.type
Publication

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